Gateless-FET pH sensor fabricated on undoped AlGaN/GaN HEMT structure HEMT structure

Gateless-FET pH sensor fabricated on undoped AlGaN/GaN HEMT structure HEMT structure

Gallium nitride with wurtzite crystal structure is a chemically stable semiconductor with high internal spontaneous and piezoelectric polarization, which make it highly suitable materials to create very sensitive and robust sensors for the detection of ions, gases and liquids. Sensing characteristic...

Full description

Bibliographic Details
Main Authors: Maneea Eizadi Sharifabad, Mastura Shafinaz Zainal Abidin, Shaharin Fadzli Abd Rahman, Abdul Manaf Hashim, Abdul Rahim Abdul Rahman, Nurul Afzan Omar, Mohd Nizam Osman, Rabia Qindeel
Format: Article
Language:English
Published: Universiti Kebangsaan Malaysia 2011
Online Access:http://journalarticle.ukm.my/708/1/12_Maneea.pdf

Internet

http://journalarticle.ukm.my/708/1/12_Maneea.pdf

Similar Items