Surface morphology of In0.5Ga0.5 quantum dots grown using stranski-krastanov growth mode
In this research an atomic force microscopy (AFM) study on self-assembled In0.5Ga0.5As/GaAs quantum dots (QDs) was performed. Surface morphology of self-assembled In0.5Ga0.5As QDs changes with different growth time. Increasing growth time increased the dots size and decreased the dots density. In ad...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
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Universiti Kebangsaan Malaysia
2010
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| Online Access: | http://journalarticle.ukm.my/7448/1/26_Ayiesah.pdf |
| _version_ | 1825726034951012352 |
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| author | Didik Aryanto, Zulkafli Othaman, Abd. Khamim Ismail, Amira Saryati Ameruddin, |
| author_facet | Didik Aryanto, Zulkafli Othaman, Abd. Khamim Ismail, Amira Saryati Ameruddin, |
| author_sort | Didik Aryanto, |
| collection | UKM |
| description | In this research an atomic force microscopy (AFM) study on self-assembled In0.5Ga0.5As/GaAs quantum dots (QDs) was performed. Surface morphology of self-assembled In0.5Ga0.5As QDs changes with different growth time. Increasing growth time increased the dots size and decreased the dots density. In addiditon, self-assembled In0.5Ga0.5As QDs was grown on In0.1Ga0.9As underlying layer with different after-growth AsH3 flow time during cooling-down. The underlying layer caused lattice strain relaxation in the QDs on the surface. Increasing the period of AsH3 flow during cooling-down reduced the diameter of the dots and increased the density. The migration of groups III species in the growth of In0.5Ga0.5As/GaAs system was influenced by AsH3 flow during cooling-down period. This was due to the increase in surface population of active arsenic species. Underlying layer and the period of AsH3 flow during cooling-down are the two key factors in the fabrication of small and dense In0.5Ga0.5As QDs. |
| first_indexed | 2024-03-06T04:04:42Z |
| format | Article |
| id | ukm.eprints-7448 |
| institution | Universiti Kebangsaan Malaysia |
| language | English |
| last_indexed | 2024-03-06T04:04:42Z |
| publishDate | 2010 |
| publisher | Universiti Kebangsaan Malaysia |
| record_format | dspace |
| spelling | ukm.eprints-74482016-12-14T06:44:07Z http://journalarticle.ukm.my/7448/ Surface morphology of In0.5Ga0.5 quantum dots grown using stranski-krastanov growth mode Didik Aryanto, Zulkafli Othaman, Abd. Khamim Ismail, Amira Saryati Ameruddin, In this research an atomic force microscopy (AFM) study on self-assembled In0.5Ga0.5As/GaAs quantum dots (QDs) was performed. Surface morphology of self-assembled In0.5Ga0.5As QDs changes with different growth time. Increasing growth time increased the dots size and decreased the dots density. In addiditon, self-assembled In0.5Ga0.5As QDs was grown on In0.1Ga0.9As underlying layer with different after-growth AsH3 flow time during cooling-down. The underlying layer caused lattice strain relaxation in the QDs on the surface. Increasing the period of AsH3 flow during cooling-down reduced the diameter of the dots and increased the density. The migration of groups III species in the growth of In0.5Ga0.5As/GaAs system was influenced by AsH3 flow during cooling-down period. This was due to the increase in surface population of active arsenic species. Underlying layer and the period of AsH3 flow during cooling-down are the two key factors in the fabrication of small and dense In0.5Ga0.5As QDs. Universiti Kebangsaan Malaysia 2010-12 Article PeerReviewed application/pdf en http://journalarticle.ukm.my/7448/1/26_Ayiesah.pdf Didik Aryanto, and Zulkafli Othaman, and Abd. Khamim Ismail, and Amira Saryati Ameruddin, (2010) Surface morphology of In0.5Ga0.5 quantum dots grown using stranski-krastanov growth mode. Sains Malaysiana, 39 (6). pp. 1025-1030. ISSN 0126-6039 http://www.ukm.my/jsm/english_journals/vol39num6_2010/contentsVol39num6_2010.html |
| spellingShingle | Didik Aryanto, Zulkafli Othaman, Abd. Khamim Ismail, Amira Saryati Ameruddin, Surface morphology of In0.5Ga0.5 quantum dots grown using stranski-krastanov growth mode |
| title | Surface morphology of In0.5Ga0.5 quantum dots grown using stranski-krastanov growth mode |
| title_full | Surface morphology of In0.5Ga0.5 quantum dots grown using stranski-krastanov growth mode |
| title_fullStr | Surface morphology of In0.5Ga0.5 quantum dots grown using stranski-krastanov growth mode |
| title_full_unstemmed | Surface morphology of In0.5Ga0.5 quantum dots grown using stranski-krastanov growth mode |
| title_short | Surface morphology of In0.5Ga0.5 quantum dots grown using stranski-krastanov growth mode |
| title_sort | surface morphology of in0 5ga0 5 quantum dots grown using stranski krastanov growth mode |
| url | http://journalarticle.ukm.my/7448/1/26_Ayiesah.pdf |
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