Lateral epitaxial overgrowth and reduction in defect density of 3C-SiC on patterned Si substrates
Selective growth and reduction of defects of cubic silicon carbide (3C-SiC) crystals grown within windows and laterally over SiO2 masks patterned on Si substrates are presented. The growth has been performed via chemical vapor deposition using hexachlorodisilane and propane, as well as hexamethyldis...
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| Format: | Article |
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Elsevier
2004
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