Scaling behaviors of transient noise current in organic field-effect transistors
Top-contact and bottom-gate organic field-effect transistors (OFETs) based on poly(3-hexylthiophene), P3HT polymer has been fabricated with thermal treatment condition. Transient noise currents of the OFETs are measured at various source–drain voltages ranging from 0 V to −60 V with respect to a fix...
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| Format: | Article |
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Elsevier
2012
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