ZrO2 thin films on Si substrate
In the advancement of metal–oxide–semiconductor technology, Si-based semiconductor, with SiO2 as outstanding dielectric, has been dominating microelectronic industry for decades. However, the drastic down-scaling in ultra-large-scale integrated circuitry has made ultrathin SiO2 (~1.2 nm) unacceptabl...
| Main Authors: | , |
|---|---|
| Format: | Article |
| Published: |
Kluwer (now part of Springer)
2010
|
| Subjects: |