ZrO2 thin films on Si substrate
In the advancement of metal–oxide–semiconductor technology, Si-based semiconductor, with SiO2 as outstanding dielectric, has been dominating microelectronic industry for decades. However, the drastic down-scaling in ultra-large-scale integrated circuitry has made ultrathin SiO2 (~1.2 nm) unacceptabl...
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| Format: | Article |
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Kluwer (now part of Springer)
2010
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| _version_ | 1825720273874190336 |
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| author | Wong, Y.H. Cheong, K.Y. |
| author_facet | Wong, Y.H. Cheong, K.Y. |
| author_sort | Wong, Y.H. |
| collection | UM |
| description | In the advancement of metal–oxide–semiconductor technology, Si-based semiconductor, with SiO2 as outstanding dielectric, has been dominating microelectronic industry for decades. However, the drastic down-scaling in ultra-large-scale integrated circuitry has made ultrathin SiO2 (~1.2 nm) unacceptable for many practical reasons. Introduction of ZrO2 as high-κ dielectrics replacing SiO2 is undeniably a potential yet formidable solution for the aforementioned problem. The objective of this review is to present the current knowledge of ZrO2 thin film as gate dielectric on Si, in terms of its material and electrical properties produced by various deposition techniques. One of the techniques being focused is thermal oxidation of sputtered Zr and the mechanisms of transforming the metal into oxide has been extensively reviewed. |
| first_indexed | 2024-03-06T05:32:37Z |
| format | Article |
| id | um.eprints-12995 |
| institution | Universiti Malaya |
| last_indexed | 2024-03-06T05:32:37Z |
| publishDate | 2010 |
| publisher | Kluwer (now part of Springer) |
| record_format | dspace |
| spelling | um.eprints-129952015-03-11T01:59:35Z http://eprints.um.edu.my/12995/ ZrO2 thin films on Si substrate Wong, Y.H. Cheong, K.Y. TA Engineering (General). Civil engineering (General) TJ Mechanical engineering and machinery In the advancement of metal–oxide–semiconductor technology, Si-based semiconductor, with SiO2 as outstanding dielectric, has been dominating microelectronic industry for decades. However, the drastic down-scaling in ultra-large-scale integrated circuitry has made ultrathin SiO2 (~1.2 nm) unacceptable for many practical reasons. Introduction of ZrO2 as high-κ dielectrics replacing SiO2 is undeniably a potential yet formidable solution for the aforementioned problem. The objective of this review is to present the current knowledge of ZrO2 thin film as gate dielectric on Si, in terms of its material and electrical properties produced by various deposition techniques. One of the techniques being focused is thermal oxidation of sputtered Zr and the mechanisms of transforming the metal into oxide has been extensively reviewed. Kluwer (now part of Springer) 2010-10 Article PeerReviewed Wong, Y.H. and Cheong, K.Y. (2010) ZrO2 thin films on Si substrate. Journal of Materials Science: Materials in Electronics, 21 (10). pp. 980-993. ISSN 0957-4522, DOI https://doi.org/10.1007/s10854-010-0144-5 <https://doi.org/10.1007/s10854-010-0144-5>. http://link.springer.com/article/10.1007%2Fs10854-010-0144-5 http://dx.doi.org/10.1007/s10854-010-0144-5 |
| spellingShingle | TA Engineering (General). Civil engineering (General) TJ Mechanical engineering and machinery Wong, Y.H. Cheong, K.Y. ZrO2 thin films on Si substrate |
| title | ZrO2 thin films on Si substrate |
| title_full | ZrO2 thin films on Si substrate |
| title_fullStr | ZrO2 thin films on Si substrate |
| title_full_unstemmed | ZrO2 thin films on Si substrate |
| title_short | ZrO2 thin films on Si substrate |
| title_sort | zro2 thin films on si substrate |
| topic | TA Engineering (General). Civil engineering (General) TJ Mechanical engineering and machinery |
| work_keys_str_mv | AT wongyh zro2thinfilmsonsisubstrate AT cheongky zro2thinfilmsonsisubstrate |