Effects of post- oxidation annealing temperature on ZrO2 thin film deposited on 4H-SiC substrate
ZrO2 thin film has been formed on n-type 4H-SiC substrate using a combination of metal sputtering (∼25 nm thick) and thermal oxidation (15 min at 500 °C) processes. Effects of post-oxidation annealing temperature (600–900 °C) on the physical and electrical properties of the thin film have been inves...
| Main Authors: | , , , , , , , , |
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| Format: | Article |
| Published: |
Elsevier
2011
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| Subjects: |