Effects of post- oxidation annealing temperature on ZrO2 thin film deposited on 4H-SiC substrate

Effects of post- oxidation annealing temperature on ZrO2 thin film deposited on 4H-SiC substrate

ZrO2 thin film has been formed on n-type 4H-SiC substrate using a combination of metal sputtering (∼25 nm thick) and thermal oxidation (15 min at 500 °C) processes. Effects of post-oxidation annealing temperature (600–900 °C) on the physical and electrical properties of the thin film have been inves...

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Bibliographic Details
Main Authors:	Kurniawan, T., Wong, Y.H., Cheong, K.Y., Moon, J.H., Bahng, W., Razak, K.A., Lockman, Z., Kim, H.J., Kim, N.K.
Format:	Article
Published:	Elsevier 2011
Subjects:	TA Engineering (General). Civil engineering (General)

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