Metal-Oxide-Semiconductor Characteristics of Zr-Oxynitride Thin Film on 4H-SiC Substrate
Sputtered Zr on 4H-SiC substrate and followed by simultaneous oxidation and nitridation in nitrous oxide ambient at various temperatures (400–900°C) for 15 min have been systematically investigated. The structural and electrical properties of the samples were evaluated. Energy-filtered transmission...
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Electrochemical Society
2012
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