Crystallinity and Si-H bonding configuration of nc-Si:H films grown by Layer-by-layer (LBL) deposition technique at different RF power
A set of hydrogenated nanocrystalline silicon (nc-Si:H) films prepared in a home built plasma enhanced chemical vapour deposition (PECVD) system using the layer by- layer (LBL) deposition technique have been studied. The 13.56 MHz RF power was varied from 20 to 100 W to study the influence of RF po...
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| Format: | Conference or Workshop Item |
| Language: | English |
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2007
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| Online Access: | http://eprints.um.edu.my/13516/1/0001.pdf |
| _version_ | 1825720365342523392 |
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| author | Tong, G.B. Ab. Ghani, S.M. Abdul Rahman, S. |
| author_facet | Tong, G.B. Ab. Ghani, S.M. Abdul Rahman, S. |
| author_sort | Tong, G.B. |
| collection | UM |
| description | A set of hydrogenated nanocrystalline silicon (nc-Si:H) films prepared in a home built plasma enhanced chemical vapour deposition (PECVD) system using the layer by-
layer (LBL) deposition technique have been studied. The 13.56 MHz RF power was varied from 20 to 100 W to study the influence of RF power on the structural properties of the nc-Si:H films. The structure of the films was studied by means of X-ray diffraction (XRD) and Fourier transform infrared (FTIR) spectroscopy. Appearance of an XRD peak at diffraction angle of 56.1 0 which correspond to silicon orientation of (311) was observed in all films deposited on c-Si substrate indicating evidence of crystallinity in the films. The crystallite sizes were in the range of 5 to 40 nm as determined using the Scherrer technique. The integrated
intensities of absorption bands t 630, 780 - 880 and 2000 - 2090 em:' from FTIR spectrum which corresponded to various Si-H bonding configurations in the films were studied and were related to the presence small clusters of nanocrystallites embedded in an amorphous matrix. Based on the dependence of amplitudes of Si- H vibrational modes on crystallite size and RF power, the properties and the role of hydrogen in nc-Si:H films prepared using the LBL technique were discussed. |
| first_indexed | 2024-03-06T05:34:01Z |
| format | Conference or Workshop Item |
| id | um.eprints-13516 |
| institution | Universiti Malaya |
| language | English |
| last_indexed | 2024-03-06T05:34:01Z |
| publishDate | 2007 |
| record_format | dspace |
| spelling | um.eprints-135162015-05-13T08:35:14Z http://eprints.um.edu.my/13516/ Crystallinity and Si-H bonding configuration of nc-Si:H films grown by Layer-by-layer (LBL) deposition technique at different RF power Tong, G.B. Ab. Ghani, S.M. Abdul Rahman, S. T Technology (General) A set of hydrogenated nanocrystalline silicon (nc-Si:H) films prepared in a home built plasma enhanced chemical vapour deposition (PECVD) system using the layer by- layer (LBL) deposition technique have been studied. The 13.56 MHz RF power was varied from 20 to 100 W to study the influence of RF power on the structural properties of the nc-Si:H films. The structure of the films was studied by means of X-ray diffraction (XRD) and Fourier transform infrared (FTIR) spectroscopy. Appearance of an XRD peak at diffraction angle of 56.1 0 which correspond to silicon orientation of (311) was observed in all films deposited on c-Si substrate indicating evidence of crystallinity in the films. The crystallite sizes were in the range of 5 to 40 nm as determined using the Scherrer technique. The integrated intensities of absorption bands t 630, 780 - 880 and 2000 - 2090 em:' from FTIR spectrum which corresponded to various Si-H bonding configurations in the films were studied and were related to the presence small clusters of nanocrystallites embedded in an amorphous matrix. Based on the dependence of amplitudes of Si- H vibrational modes on crystallite size and RF power, the properties and the role of hydrogen in nc-Si:H films prepared using the LBL technique were discussed. 2007-06 Conference or Workshop Item PeerReviewed application/pdf en http://eprints.um.edu.my/13516/1/0001.pdf Tong, G.B. and Ab. Ghani, S.M. and Abdul Rahman, S. (2007) Crystallinity and Si-H bonding configuration of nc-Si:H films grown by Layer-by-layer (LBL) deposition technique at different RF power. In: International Workshop and Conference on Nanotechnology , 12-15 June 2007, Bangi, Malaysia. (Submitted) |
| spellingShingle | T Technology (General) Tong, G.B. Ab. Ghani, S.M. Abdul Rahman, S. Crystallinity and Si-H bonding configuration of nc-Si:H films grown by Layer-by-layer (LBL) deposition technique at different RF power |
| title | Crystallinity and Si-H bonding configuration of nc-Si:H films grown by Layer-by-layer (LBL) deposition technique at different RF power |
| title_full | Crystallinity and Si-H bonding configuration of nc-Si:H films grown by Layer-by-layer (LBL) deposition technique at different RF power |
| title_fullStr | Crystallinity and Si-H bonding configuration of nc-Si:H films grown by Layer-by-layer (LBL) deposition technique at different RF power |
| title_full_unstemmed | Crystallinity and Si-H bonding configuration of nc-Si:H films grown by Layer-by-layer (LBL) deposition technique at different RF power |
| title_short | Crystallinity and Si-H bonding configuration of nc-Si:H films grown by Layer-by-layer (LBL) deposition technique at different RF power |
| title_sort | crystallinity and si h bonding configuration of nc si h films grown by layer by layer lbl deposition technique at different rf power |
| topic | T Technology (General) |
| url | http://eprints.um.edu.my/13516/1/0001.pdf |
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