Physical and electrical properties of thermal oxidized Sm2O3 gate oxide thin film on Si substrate: Influence of oxidation durations
Growth of 150 nm Sm2O3 films by sputtered pure samarium metal film on silicon substrates and followed by thermal oxidation process in oxygen ambient at 700 °C through various oxidation durations (5 min, 10 min, 15 min and 20 min) has been carried out. The crystallinity of Sm2O3 film and existence of...
| Main Authors: | , , |
|---|---|
| Format: | Article |
| Published: |
Elsevier
2016
|
| Subjects: |