Lanthanide rare earth oxide thin film as an alternative gate oxide
An ultrathin gate oxide is needed for future nanoscale technology due to the density of integrated circuits will increase exponentially every two to three years as predicted by Moore's Law. Some problems were occurred in conventional silicon dioxide gate oxide during applications such as high l...
| Κύριοι συγγραφείς: | , , |
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| Μορφή: | Άρθρο |
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Elsevier
2017
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