A new approach to study the effect of generation rate on drain-source current of bilayer graphene transistors
This paper presents a new approach to study the effect of impact ionization on the current of bilayer graphene field effect transistors. Analytical models for surface potential and current together with a Monte Carlo approach which include the edge effect scattering are used to calculate the current...
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| Format: | Article |
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Springer Verlag (Germany)
2016
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