An Integrated Linearization Technique for GaAs Bipolar WCDMA Power Amplifier
Here we report a novel linearization and efficiency improvement technique for heterojunction bipolar transistor (HBT)-based Wireless Code Division Multiple Access (WCDMA) power amplifier. A process solution is proposed where a tantalum nitride (TaN) layer is strapped to the HBT base metal layer that...
| Huvudupphovsmän: | , , , , , |
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| Materialtyp: | Artikel |
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Indian Academy of Sciences
2018
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