An Integrated Linearization Technique for GaAs Bipolar WCDMA Power Amplifier

An Integrated Linearization Technique for GaAs Bipolar WCDMA Power Amplifier

Here we report a novel linearization and efficiency improvement technique for heterojunction bipolar transistor (HBT)-based Wireless Code Division Multiple Access (WCDMA) power amplifier. A process solution is proposed where a tantalum nitride (TaN) layer is strapped to the HBT base metal layer that...

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Bibliographic Details
Main Authors:	Rajendran, Jagadheswaran, Hamid, Sofiyah Sal, Kunhi Mohd, Shukri Korakkottil, Abdullah, Mohd Zaid, Ramiah, Harikrishnan, Kumar, Narendra
Format:	Article
Published:	Indian Academy of Sciences 2018
Subjects:	TK Electrical engineering. Electronics Nuclear engineering

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