Embedded AlN/GaN multi-layer for enhanced crystal quality and surface morphology of semi-polar (11-22) GaN on m-plane sapphire
We demonstrate high quality semi-polar (11-22) gallium nitride thin film grown on m-plane sapphire substrate with the insertion of AlN/GaN multi-layer via MOCVD. The influence of three different number of multi-layers AlN/GaN pairs on the crystal quality and surface morphology of semi-polar (11-22)...
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| Format: | Article |
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Elsevier
2018
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