Embedded AlN/GaN multi-layer for enhanced crystal quality and surface morphology of semi-polar (11-22) GaN on m-plane sapphire

Embedded AlN/GaN multi-layer for enhanced crystal quality and surface morphology of semi-polar (11-22) GaN on m-plane sapphire

We demonstrate high quality semi-polar (11-22) gallium nitride thin film grown on m-plane sapphire substrate with the insertion of AlN/GaN multi-layer via MOCVD. The influence of three different number of multi-layers AlN/GaN pairs on the crystal quality and surface morphology of semi-polar (11-22)...

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Bibliographic Details
Main Authors:	Omar, Al-Zuhairi, Shuhaimi, Ahmad, Makinudin, Abdullah Haaziq Ahmad, Abdul Khudus, Muhammad Imran Mustafa, Supangat, Azzuliani
Format:	Article
Published:	Elsevier 2018
Subjects:	Q Science (General) QC Physics

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