Metal organic chemical vapor deposition of m-plane GaN epi-layer using a three-step approach towards enhanced surface morphology
Specular m-plane (101¯0) gallium nitride (m-GaN) epi-layer are grown on m-plane (101¯0) sapphire substrates by metal organic chemical vapor deposition using a three-step approach. A two-step approach was used to grow m-GaN buffer layer (BL), while a three-step approach was applied to improve the sur...
| Main Authors: | , , , , , , , , |
|---|---|
| Format: | Article |
| Published: |
Elsevier
2018
|
| Subjects: |