Metal organic chemical vapor deposition of m-plane GaN epi-layer using a three-step approach towards enhanced surface morphology
Specular m-plane (101¯0) gallium nitride (m-GaN) epi-layer are grown on m-plane (101¯0) sapphire substrates by metal organic chemical vapor deposition using a three-step approach. A two-step approach was used to grow m-GaN buffer layer (BL), while a three-step approach was applied to improve the sur...
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| Format: | Article |
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Elsevier
2018
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| author | Azman, Adreen Shuhaimi, Ahmad Omar, Al-Zuhairi Kamarundzaman, Anas Abdul Khudus, Muhammad Imran Mustafa Ariff, Azharul Samsudin, M.E.A. Zainal, Norzaini Rahman, Saadah Abdul |
| author_facet | Azman, Adreen Shuhaimi, Ahmad Omar, Al-Zuhairi Kamarundzaman, Anas Abdul Khudus, Muhammad Imran Mustafa Ariff, Azharul Samsudin, M.E.A. Zainal, Norzaini Rahman, Saadah Abdul |
| author_sort | Azman, Adreen |
| collection | UM |
| description | Specular m-plane (101¯0) gallium nitride (m-GaN) epi-layer are grown on m-plane (101¯0) sapphire substrates by metal organic chemical vapor deposition using a three-step approach. A two-step approach was used to grow m-GaN buffer layer (BL), while a three-step approach was applied to improve the surface morphology of the top m-GaN epi-layer at high temperature. The three-step approach started with growing m-aluminum nitride nucleation layer with an optimized ammonia flux during the growth of aluminum nitride. Then the temperature was ramped up during the recrystallization step before the m-GaN BL deposition at low-temperature and the growth of m-GaN layer at high-temperature for the final step. Unexpectedly, when ammonia flow was intentionally halted during the recrystallization step, the surface morphology of the BL drastically changed from three- to two- dimensional with an abrupt cross-sectional structure. This in turn facilitated the complete coalescence of the m-GaN layer as revealed by field emission scanning electron microscopy. The three-step technique was found to affect the quality of m-GaN epi-layer as the samples exhibit improved crystallinity with X-ray diffraction rocking curves widths of 4680 and 1980 arcsec along the azimuth, perpendicular and parallel to [101¯0] directions, respectively. |
| first_indexed | 2024-03-06T05:56:51Z |
| format | Article |
| id | um.eprints-22400 |
| institution | Universiti Malaya |
| last_indexed | 2024-03-06T05:56:51Z |
| publishDate | 2018 |
| publisher | Elsevier |
| record_format | dspace |
| spelling | um.eprints-224002019-09-18T02:12:29Z http://eprints.um.edu.my/22400/ Metal organic chemical vapor deposition of m-plane GaN epi-layer using a three-step approach towards enhanced surface morphology Azman, Adreen Shuhaimi, Ahmad Omar, Al-Zuhairi Kamarundzaman, Anas Abdul Khudus, Muhammad Imran Mustafa Ariff, Azharul Samsudin, M.E.A. Zainal, Norzaini Rahman, Saadah Abdul Q Science (General) QC Physics Specular m-plane (101¯0) gallium nitride (m-GaN) epi-layer are grown on m-plane (101¯0) sapphire substrates by metal organic chemical vapor deposition using a three-step approach. A two-step approach was used to grow m-GaN buffer layer (BL), while a three-step approach was applied to improve the surface morphology of the top m-GaN epi-layer at high temperature. The three-step approach started with growing m-aluminum nitride nucleation layer with an optimized ammonia flux during the growth of aluminum nitride. Then the temperature was ramped up during the recrystallization step before the m-GaN BL deposition at low-temperature and the growth of m-GaN layer at high-temperature for the final step. Unexpectedly, when ammonia flow was intentionally halted during the recrystallization step, the surface morphology of the BL drastically changed from three- to two- dimensional with an abrupt cross-sectional structure. This in turn facilitated the complete coalescence of the m-GaN layer as revealed by field emission scanning electron microscopy. The three-step technique was found to affect the quality of m-GaN epi-layer as the samples exhibit improved crystallinity with X-ray diffraction rocking curves widths of 4680 and 1980 arcsec along the azimuth, perpendicular and parallel to [101¯0] directions, respectively. Elsevier 2018 Article PeerReviewed Azman, Adreen and Shuhaimi, Ahmad and Omar, Al-Zuhairi and Kamarundzaman, Anas and Abdul Khudus, Muhammad Imran Mustafa and Ariff, Azharul and Samsudin, M.E.A. and Zainal, Norzaini and Rahman, Saadah Abdul (2018) Metal organic chemical vapor deposition of m-plane GaN epi-layer using a three-step approach towards enhanced surface morphology. Thin Solid Films, 667. pp. 48-54. ISSN 0040-6090, DOI https://doi.org/10.1016/j.tsf.2018.09.052 <https://doi.org/10.1016/j.tsf.2018.09.052>. https://doi.org/10.1016/j.tsf.2018.09.052 doi:10.1016/j.tsf.2018.09.052 |
| spellingShingle | Q Science (General) QC Physics Azman, Adreen Shuhaimi, Ahmad Omar, Al-Zuhairi Kamarundzaman, Anas Abdul Khudus, Muhammad Imran Mustafa Ariff, Azharul Samsudin, M.E.A. Zainal, Norzaini Rahman, Saadah Abdul Metal organic chemical vapor deposition of m-plane GaN epi-layer using a three-step approach towards enhanced surface morphology |
| title | Metal organic chemical vapor deposition of m-plane GaN epi-layer using a three-step approach towards enhanced surface morphology |
| title_full | Metal organic chemical vapor deposition of m-plane GaN epi-layer using a three-step approach towards enhanced surface morphology |
| title_fullStr | Metal organic chemical vapor deposition of m-plane GaN epi-layer using a three-step approach towards enhanced surface morphology |
| title_full_unstemmed | Metal organic chemical vapor deposition of m-plane GaN epi-layer using a three-step approach towards enhanced surface morphology |
| title_short | Metal organic chemical vapor deposition of m-plane GaN epi-layer using a three-step approach towards enhanced surface morphology |
| title_sort | metal organic chemical vapor deposition of m plane gan epi layer using a three step approach towards enhanced surface morphology |
| topic | Q Science (General) QC Physics |
| work_keys_str_mv | AT azmanadreen metalorganicchemicalvapordepositionofmplaneganepilayerusingathreestepapproachtowardsenhancedsurfacemorphology AT shuhaimiahmad metalorganicchemicalvapordepositionofmplaneganepilayerusingathreestepapproachtowardsenhancedsurfacemorphology AT omaralzuhairi metalorganicchemicalvapordepositionofmplaneganepilayerusingathreestepapproachtowardsenhancedsurfacemorphology AT kamarundzamananas metalorganicchemicalvapordepositionofmplaneganepilayerusingathreestepapproachtowardsenhancedsurfacemorphology AT abdulkhudusmuhammadimranmustafa metalorganicchemicalvapordepositionofmplaneganepilayerusingathreestepapproachtowardsenhancedsurfacemorphology AT ariffazharul metalorganicchemicalvapordepositionofmplaneganepilayerusingathreestepapproachtowardsenhancedsurfacemorphology AT samsudinmea metalorganicchemicalvapordepositionofmplaneganepilayerusingathreestepapproachtowardsenhancedsurfacemorphology AT zainalnorzaini metalorganicchemicalvapordepositionofmplaneganepilayerusingathreestepapproachtowardsenhancedsurfacemorphology AT rahmansaadahabdul metalorganicchemicalvapordepositionofmplaneganepilayerusingathreestepapproachtowardsenhancedsurfacemorphology |