Metal organic chemical vapor deposition of m-plane GaN epi-layer using a three-step approach towards enhanced surface morphology

Metal organic chemical vapor deposition of m-plane GaN epi-layer using a three-step approach towards enhanced surface morphology

Specular m-plane (101¯0) gallium nitride (m-GaN) epi-layer are grown on m-plane (101¯0) sapphire substrates by metal organic chemical vapor deposition using a three-step approach. A two-step approach was used to grow m-GaN buffer layer (BL), while a three-step approach was applied to improve the sur...

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Bibliographic Details
Main Authors:	Azman, Adreen, Shuhaimi, Ahmad, Omar, Al-Zuhairi, Kamarundzaman, Anas, Abdul Khudus, Muhammad Imran Mustafa, Ariff, Azharul, Samsudin, M.E.A., Zainal, Norzaini, Rahman, Saadah Abdul
Format:	Article
Published:	Elsevier 2018
Subjects:	Q Science (General) QC Physics

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