Post deposition annealing effect on properties of Y2O3/Al2O3 stacking gate dielectric on 4H-SiC
In this paper, the effect of post deposition annealing (PDA) on the chemical, structural, and electrical properties of the high-k Y 2 O 3 /Al 2 O 3 stacking dielectric on p-type 4H-SiC were studied. High-k dielectric provides a physically thicker film with equivalent capacitance, therefore better ex...
| Main Authors: | , , , , , |
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| Format: | Article |
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Elsevier
2019
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| Subjects: |