Design optimization of the graded AlGaN/GaN HEMT device performance based on material and physical dimensions
Purpose: To design and optimize the traditional aluminum gallium nitride/gallium nitride high electron mobility transistor (HEMT) device in achieving improved performance and current handling capability using the Synopsys’ Sentaurus TCAD tool. Design/methodology/approach: Varying material and physic...
| Main Authors: | , , , , , |
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| Format: | Article |
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Emerald
2019
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