Dual characteristics of molybdenum disulfide based PN heterojunction photodetector prepared via drop-cast technique
A p-silicon/molybdenum disulfide (p-Si/MoS2) p-n heterojunction photodetector (PD) is proposed and fabricated using the drop-casting technique. The composition of elements in the localized surface morphology enables for excellent photoconduction under 380 nm illumination at various ultraviolet (UV)...
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Elsevier
2019
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