Dual characteristics of molybdenum disulfide based PN heterojunction photodetector prepared via drop-cast technique
A p-silicon/molybdenum disulfide (p-Si/MoS2) p-n heterojunction photodetector (PD) is proposed and fabricated using the drop-casting technique. The composition of elements in the localized surface morphology enables for excellent photoconduction under 380 nm illumination at various ultraviolet (UV)...
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Elsevier
2019
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| author | Ahmad, Harith Thandavan, Tamil Many K. Thambiratnam, Kavintheran |
| author_facet | Ahmad, Harith Thandavan, Tamil Many K. Thambiratnam, Kavintheran |
| author_sort | Ahmad, Harith |
| collection | UM |
| description | A p-silicon/molybdenum disulfide (p-Si/MoS2) p-n heterojunction photodetector (PD) is proposed and fabricated using the drop-casting technique. The composition of elements in the localized surface morphology enables for excellent photoconduction under 380 nm illumination at various ultraviolet (UV) powers. The uneven and even distribution of the current-voltage I-V curve in the negative and positive bias regions indicate substantial dual characteristics in the fabricated device. A high responsivity of about 9.6 and 0.388 AW−1 is measured at the negative and positive bias regions respectively, allowing the p-Si/MoS2 p-n heterojunction PD to operate at UV powers lower than 830 μW. © 2019 Elsevier GmbH |
| first_indexed | 2024-03-06T06:02:29Z |
| format | Article |
| id | um.eprints-24334 |
| institution | Universiti Malaya |
| last_indexed | 2024-03-06T06:02:29Z |
| publishDate | 2019 |
| publisher | Elsevier |
| record_format | dspace |
| spelling | um.eprints-243342020-05-19T02:12:57Z http://eprints.um.edu.my/24334/ Dual characteristics of molybdenum disulfide based PN heterojunction photodetector prepared via drop-cast technique Ahmad, Harith Thandavan, Tamil Many K. Thambiratnam, Kavintheran QC Physics A p-silicon/molybdenum disulfide (p-Si/MoS2) p-n heterojunction photodetector (PD) is proposed and fabricated using the drop-casting technique. The composition of elements in the localized surface morphology enables for excellent photoconduction under 380 nm illumination at various ultraviolet (UV) powers. The uneven and even distribution of the current-voltage I-V curve in the negative and positive bias regions indicate substantial dual characteristics in the fabricated device. A high responsivity of about 9.6 and 0.388 AW−1 is measured at the negative and positive bias regions respectively, allowing the p-Si/MoS2 p-n heterojunction PD to operate at UV powers lower than 830 μW. © 2019 Elsevier GmbH Elsevier 2019 Article PeerReviewed Ahmad, Harith and Thandavan, Tamil Many K. and Thambiratnam, Kavintheran (2019) Dual characteristics of molybdenum disulfide based PN heterojunction photodetector prepared via drop-cast technique. Optik, 188. pp. 8-11. ISSN 0030-4026, DOI https://doi.org/10.1016/j.ijleo.2019.05.033 <https://doi.org/10.1016/j.ijleo.2019.05.033>. https://doi.org/10.1016/j.ijleo.2019.05.033 doi:10.1016/j.ijleo.2019.05.033 |
| spellingShingle | QC Physics Ahmad, Harith Thandavan, Tamil Many K. Thambiratnam, Kavintheran Dual characteristics of molybdenum disulfide based PN heterojunction photodetector prepared via drop-cast technique |
| title | Dual characteristics of molybdenum disulfide based PN heterojunction photodetector prepared via drop-cast technique |
| title_full | Dual characteristics of molybdenum disulfide based PN heterojunction photodetector prepared via drop-cast technique |
| title_fullStr | Dual characteristics of molybdenum disulfide based PN heterojunction photodetector prepared via drop-cast technique |
| title_full_unstemmed | Dual characteristics of molybdenum disulfide based PN heterojunction photodetector prepared via drop-cast technique |
| title_short | Dual characteristics of molybdenum disulfide based PN heterojunction photodetector prepared via drop-cast technique |
| title_sort | dual characteristics of molybdenum disulfide based pn heterojunction photodetector prepared via drop cast technique |
| topic | QC Physics |
| work_keys_str_mv | AT ahmadharith dualcharacteristicsofmolybdenumdisulfidebasedpnheterojunctionphotodetectorpreparedviadropcasttechnique AT thandavantamilmanyk dualcharacteristicsofmolybdenumdisulfidebasedpnheterojunctionphotodetectorpreparedviadropcasttechnique AT thambiratnamkavintheran dualcharacteristicsofmolybdenumdisulfidebasedpnheterojunctionphotodetectorpreparedviadropcasttechnique |