Fabrication and characterization of tungsten disulphide/silicon heterojunction photodetector for near infrared illumination
Tungsten disulphide (WS 2 ), a member of the transition metal dichalcogenide (TMD) family that is known for its superior optoelectronic properties is used in this work to fabricate a low cost and highly efficient photodetector for operation in the near infrared (NIR) region. The WS 2 /Si heterojunct...
| Հիմնական հեղինակներ: | , , , |
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| Ձևաչափ: | Հոդված |
| Հրապարակվել է: |
Elsevier
2019
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| Խորագրեր: |