Control growth of silicon nanocolumns' epitaxy on silicon nanowires
The epitaxial growth of Si nanocolumns on Si nanowires was studied using hot-wire chemical vapor deposition. A single-crystalline and surface oxide-free Si nanowire core (core radius ~21 ± 5 nm) induced by indium crystal seed was used as a substance for the vapor phase epitaxial growth. The grow...
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| Format: | Article |
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Springer Verlag
2013
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