Formation of nano-crystalline phase in hydrogenated amorphous silicon thin film by plasma focus ion beam irradiation
A 3.3 kJ Mather type dense plasma focus device is used to generate a pulsed argon ion beam of 100 KeV in this work. Hydrogenated amorphous silicon (a-Si:H) film prepared by plasma enhanced chemical vapor deposition (PECVD) on c-Si substrate was irradiated with the argon ion beam produced by this den...
| Main Authors: | , , , , , |
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| Format: | Article |
| Published: |
2012
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| Subjects: |