Infrared and raman spectroscopy studies on pulsed PECVD a-Si:H Films

This work presents a study on the structural properties of hydrogenated amorphous silicon (a-Si:H) prepared by pulsed plasma enhanced chemical vapour deposition (PECVD) technique using Raman and infrared spectroscopy. The bonded hydrogen content and hydrogen bonding configurations in the a-Si:H film...

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Main Authors: Boon, T.G., Rahman, A.S.
Format: Article
Language:English
Published: 2007
Subjects:
Online Access:http://eprints.um.edu.my/7362/1/Infrared_and_Raman_Spectroscopy_Studies_on_Pulsed_PECVD_a-SiH_Films.pdf
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author Boon, T.G.
Rahman, A.S.
author_facet Boon, T.G.
Rahman, A.S.
author_sort Boon, T.G.
collection UM
description This work presents a study on the structural properties of hydrogenated amorphous silicon (a-Si:H) prepared by pulsed plasma enhanced chemical vapour deposition (PECVD) technique using Raman and infrared spectroscopy. The bonded hydrogen content and hydrogen bonding configurations in the a-Si:H film s were investigated from the Fourier transform infrared (FTIR) spectra of the film s. The Raman spectra of the films have been used to obtain evidence of nanocrystallinity in the films. The dependence of silane flow-rates and discharge power on these properties was investigated. Increase in the discharge power resulted in films with lower hydrogen content and increase the dihydride bond concentration. Nanocrystallinity was observed in films prepared at low discharge power at all silane flow-rates but increase in discharge power resulted in films with purely amorphous structure.
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spelling um.eprints-73622013-09-23T01:20:28Z http://eprints.um.edu.my/7362/ Infrared and raman spectroscopy studies on pulsed PECVD a-Si:H Films Boon, T.G. Rahman, A.S. QC Physics This work presents a study on the structural properties of hydrogenated amorphous silicon (a-Si:H) prepared by pulsed plasma enhanced chemical vapour deposition (PECVD) technique using Raman and infrared spectroscopy. The bonded hydrogen content and hydrogen bonding configurations in the a-Si:H film s were investigated from the Fourier transform infrared (FTIR) spectra of the film s. The Raman spectra of the films have been used to obtain evidence of nanocrystallinity in the films. The dependence of silane flow-rates and discharge power on these properties was investigated. Increase in the discharge power resulted in films with lower hydrogen content and increase the dihydride bond concentration. Nanocrystallinity was observed in films prepared at low discharge power at all silane flow-rates but increase in discharge power resulted in films with purely amorphous structure. 2007 Article PeerReviewed application/pdf en http://eprints.um.edu.my/7362/1/Infrared_and_Raman_Spectroscopy_Studies_on_Pulsed_PECVD_a-SiH_Films.pdf Boon, T.G. and Rahman, A.S. (2007) Infrared and raman spectroscopy studies on pulsed PECVD a-Si:H Films. Solid State Science and Technology, 15 (2). pp. 153-160. ISSN 0128-7389,
spellingShingle QC Physics
Boon, T.G.
Rahman, A.S.
Infrared and raman spectroscopy studies on pulsed PECVD a-Si:H Films
title Infrared and raman spectroscopy studies on pulsed PECVD a-Si:H Films
title_full Infrared and raman spectroscopy studies on pulsed PECVD a-Si:H Films
title_fullStr Infrared and raman spectroscopy studies on pulsed PECVD a-Si:H Films
title_full_unstemmed Infrared and raman spectroscopy studies on pulsed PECVD a-Si:H Films
title_short Infrared and raman spectroscopy studies on pulsed PECVD a-Si:H Films
title_sort infrared and raman spectroscopy studies on pulsed pecvd a si h films
topic QC Physics
url http://eprints.um.edu.my/7362/1/Infrared_and_Raman_Spectroscopy_Studies_on_Pulsed_PECVD_a-SiH_Films.pdf
work_keys_str_mv AT boontg infraredandramanspectroscopystudiesonpulsedpecvdasihfilms
AT rahmanas infraredandramanspectroscopystudiesonpulsedpecvdasihfilms