Infrared and raman spectroscopy studies on pulsed PECVD a-Si:H Films
This work presents a study on the structural properties of hydrogenated amorphous silicon (a-Si:H) prepared by pulsed plasma enhanced chemical vapour deposition (PECVD) technique using Raman and infrared spectroscopy. The bonded hydrogen content and hydrogen bonding configurations in the a-Si:H film...
Main Authors: | Boon, T.G., Rahman, A.S. |
---|---|
Format: | Article |
Language: | English |
Published: |
2007
|
Subjects: | |
Online Access: | http://eprints.um.edu.my/7362/1/Infrared_and_Raman_Spectroscopy_Studies_on_Pulsed_PECVD_a-SiH_Films.pdf |
Similar Items
-
Effects of annealing on the electro-optical properties of a-Si:H thin films deposited by D.C. and pulsed PECVD
by: Seck, Chai Lim, et al.
Published: (2004) -
Effects of silane flow-rate on the structural properties of a-Si:H thin films deposited by d.c. and pulsed PECVD
by: Boon, Tong Goh, et al.
Published: (2004) -
Optical properties and crystallinity of hydrogenated nanocrystalline silicon (nc-Si:H) thin films deposited by rf-PECVD
by: Tong, G.B., et al.
Published: (2012) -
Highly reflective nc-Si:H/a-CNx:H multilayer films prepared by r.f. PECVD technique
by: Ritikos, R., et al.
Published: (2009) -
Photoconductivity in pulsed PECVD hydrogenated amorphous silicon thin films
by: Tong, Goh Boon, et al.
Published: (2006)