Equivalent circuit model analysis of vertical impact ionization MOSFET (IMOS)
In this paper, an equivalent circuit model is proposed that describes the avalanche and snapback characteristics of Vertical Impact Ionization MOSFET (IMOS). The equivalent circuit model is constructed using MOS transistors that represent the avalanche characteristics. The main goal is to predict th...
| Main Authors: | , , , , |
|---|---|
| Format: | Conference or Workshop Item |
| Jezik: | English |
| Izdano: |
2015
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| Teme: | |
| Online dostop: | https://eprints.ums.edu.my/id/eprint/18605/1/Equivalent%20circuit%20model%20analysis.pdf |