Enhanced reliability of vertical strained impact ionization MOSFET incorporating dielectric pocket for ultra-sensitive biosensor applications
Fast switching with an enhanced reliability device structure of Vertical Strained Impact Ionization MOSFET incorporating Dielectric Pocket (VESIMOS-DP) has been successfully design, simulated and analyzed in this paper. Ultra-low power with low subthreshold swing (S) and high breakdown voltage are i...
| Main Authors: | , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
American Scientific Publishers
2017
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| Subjects: | |
| Online Access: | https://eprints.ums.edu.my/id/eprint/19595/1/Enhanced%20reliability%20of%20vertical.pdf |