Reduced-stress GaN epitaxial layers grown on Si(1 1 1) by using a porous GaN interlayer converted from GaAs
This paper reports the reduced-stress GaN epitaxial growth on Si (1 1 1) using a porous GaN interlayer which is formed from GaAs layer by a novel nitridation process. Initially a 2 μm thick GaAs layer is grown on a Si(1 1 1) substrate by MBE. Then, a GaN buffer layer of 20 nm thick is grown on the G...
| প্রধান লেখক: | , , , , |
|---|---|
| বিন্যাস: | প্রবন্ধ |
| ভাষা: | English English |
| প্রকাশিত: |
ELSEVIER SCIENCE
2003
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| বিষয়গুলি: | |
| অনলাইন ব্যবহার করুন: | https://eprints.ums.edu.my/id/eprint/20415/1/Reduced%20stress%20GaN%20epitaxial%20layers%20grown%20on%20Si.pdf https://eprints.ums.edu.my/id/eprint/20415/7/Reduced-stress%20GaN%20epitaxial%20layers%20grown%20on%20Si%281%201%201%29%20by%20using%20a%20porous%20GaN%20interlayer%20converted%20from%20GaAs.pdf |
আন্তর্জাল
https://eprints.ums.edu.my/id/eprint/20415/1/Reduced%20stress%20GaN%20epitaxial%20layers%20grown%20on%20Si.pdfhttps://eprints.ums.edu.my/id/eprint/20415/7/Reduced-stress%20GaN%20epitaxial%20layers%20grown%20on%20Si%281%201%201%29%20by%20using%20a%20porous%20GaN%20interlayer%20converted%20from%20GaAs.pdf