Electrical and Photo-Electrical Characteristics of a GaInNAs basedp-i-n Diode with 10- undoped Quantum Wells

Electrical and Photo-Electrical Characteristics of a GaInNAs basedp-i-n Diode with 10- undoped Quantum Wells

An electrical and photo-electrical characteristics of a dilute nitride GaInNAs p-i-n diode with 10-undoped quantum wells (10-QWs) were investigated at room temperature. The QWs consists of 10-nm thick and separated by 10 nm GaAs barriers. The dilute nitride-based p-i-n diode exhibits a good rectifyi...

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Bibliographic Details
Main Authors: Khairul Anuar Mohamad, Mohamad Syahmi Nordin, Mohamad Izzuddin Abd Samad, Afishah Alias, Abu Bakar Abd Rahman, Adrian Boland-Thomas, Anthony John Vickers
Format: Article
Language:English
English
Published: 2020
Subjects:
Q Science (General)
Online Access:https://eprints.ums.edu.my/id/eprint/26392/1/Electrical%20and%20Photo-Electrical%20Characteristics%20of%20a%20GaInNAs%20basedp-i-n%20Diode%20with%2010-%20undoped%20Quantum%20Wells.pdf
https://eprints.ums.edu.my/id/eprint/26392/2/Electrical%20and%20Photo-Electrical%20Characteristics%20of%20a%20GaInNAs%20basedp-i-n%20Diode%20with%2010-%20undoped%20Quantum%20Wells1.pdf

Internet

https://eprints.ums.edu.my/id/eprint/26392/1/Electrical%20and%20Photo-Electrical%20Characteristics%20of%20a%20GaInNAs%20basedp-i-n%20Diode%20with%2010-%20undoped%20Quantum%20Wells.pdf
https://eprints.ums.edu.my/id/eprint/26392/2/Electrical%20and%20Photo-Electrical%20Characteristics%20of%20a%20GaInNAs%20basedp-i-n%20Diode%20with%2010-%20undoped%20Quantum%20Wells1.pdf

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