Electrical and Photo-Electrical Characteristics of a GaInNAs basedp-i-n Diode with 10- undoped Quantum Wells
An electrical and photo-electrical characteristics of a dilute nitride GaInNAs p-i-n diode with 10-undoped quantum wells (10-QWs) were investigated at room temperature. The QWs consists of 10-nm thick and separated by 10 nm GaAs barriers. The dilute nitride-based p-i-n diode exhibits a good rectifyi...
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| Format: | Article |
| Language: | English English |
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2020
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| Online Access: | https://eprints.ums.edu.my/id/eprint/26392/1/Electrical%20and%20Photo-Electrical%20Characteristics%20of%20a%20GaInNAs%20basedp-i-n%20Diode%20with%2010-%20undoped%20Quantum%20Wells.pdf https://eprints.ums.edu.my/id/eprint/26392/2/Electrical%20and%20Photo-Electrical%20Characteristics%20of%20a%20GaInNAs%20basedp-i-n%20Diode%20with%2010-%20undoped%20Quantum%20Wells1.pdf |
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| author | Khairul Anuar Mohamad Mohamad Syahmi Nordin Mohamad Izzuddin Abd Samad Afishah Alias Abu Bakar Abd Rahman Adrian Boland-Thomas Anthony John Vickers |
| author_facet | Khairul Anuar Mohamad Mohamad Syahmi Nordin Mohamad Izzuddin Abd Samad Afishah Alias Abu Bakar Abd Rahman Adrian Boland-Thomas Anthony John Vickers |
| author_sort | Khairul Anuar Mohamad |
| collection | UMS |
| description | An electrical and photo-electrical characteristics of a dilute nitride GaInNAs p-i-n diode with 10-undoped quantum wells (10-QWs) were investigated at room temperature. The QWs consists of 10-nm thick and separated by 10 nm GaAs barriers. The dilute nitride-based p-i-n diode exhibits a good rectifying behavior and discloses that the fabricated devices has a Schottky property. The current-voltage (I-V) characteristics showed the forward-biased region of I-V curves exhibited an exponential dependence of current on applied bias, whereas the reversed-biased region shows the saturation current with negative reverse current value (leakage currents) under dark condition. As the device was exposed to photo-illumination, the electrical characteristic exhibited an increase of dark-current by four orders of magnitude to that of device under dark condition. Upon photo-illumination, there was also a shift in the threshold voltage from 0.58 V to 0.73 V. Ideality factor, n and barrier height, B are main electrical parameters were extracted using conventional forward bias I-V characteristics. The values of barrier height, which were obtained were in good agreement with other reported values. The value of n was found to be 1.95 and 28.56. Ideality factor approaches 2 indicated that fully trap-assisted recombination in quantum wells. While, high ideality factor at photo-illumination indicated that the charge transport mechanism is controlled by tunnelling emission. |
| first_indexed | 2024-03-06T03:05:26Z |
| format | Article |
| id | ums.eprints-26392 |
| institution | Universiti Malaysia Sabah |
| language | English English |
| last_indexed | 2024-03-06T03:05:26Z |
| publishDate | 2020 |
| record_format | dspace |
| spelling | ums.eprints-263922021-01-06T05:17:26Z https://eprints.ums.edu.my/id/eprint/26392/ Electrical and Photo-Electrical Characteristics of a GaInNAs basedp-i-n Diode with 10- undoped Quantum Wells Khairul Anuar Mohamad Mohamad Syahmi Nordin Mohamad Izzuddin Abd Samad Afishah Alias Abu Bakar Abd Rahman Adrian Boland-Thomas Anthony John Vickers Q Science (General) An electrical and photo-electrical characteristics of a dilute nitride GaInNAs p-i-n diode with 10-undoped quantum wells (10-QWs) were investigated at room temperature. The QWs consists of 10-nm thick and separated by 10 nm GaAs barriers. The dilute nitride-based p-i-n diode exhibits a good rectifying behavior and discloses that the fabricated devices has a Schottky property. The current-voltage (I-V) characteristics showed the forward-biased region of I-V curves exhibited an exponential dependence of current on applied bias, whereas the reversed-biased region shows the saturation current with negative reverse current value (leakage currents) under dark condition. As the device was exposed to photo-illumination, the electrical characteristic exhibited an increase of dark-current by four orders of magnitude to that of device under dark condition. Upon photo-illumination, there was also a shift in the threshold voltage from 0.58 V to 0.73 V. Ideality factor, n and barrier height, B are main electrical parameters were extracted using conventional forward bias I-V characteristics. The values of barrier height, which were obtained were in good agreement with other reported values. The value of n was found to be 1.95 and 28.56. Ideality factor approaches 2 indicated that fully trap-assisted recombination in quantum wells. While, high ideality factor at photo-illumination indicated that the charge transport mechanism is controlled by tunnelling emission. 2020 Article PeerReviewed text en https://eprints.ums.edu.my/id/eprint/26392/1/Electrical%20and%20Photo-Electrical%20Characteristics%20of%20a%20GaInNAs%20basedp-i-n%20Diode%20with%2010-%20undoped%20Quantum%20Wells.pdf text en https://eprints.ums.edu.my/id/eprint/26392/2/Electrical%20and%20Photo-Electrical%20Characteristics%20of%20a%20GaInNAs%20basedp-i-n%20Diode%20with%2010-%20undoped%20Quantum%20Wells1.pdf Khairul Anuar Mohamad and Mohamad Syahmi Nordin and Mohamad Izzuddin Abd Samad and Afishah Alias and Abu Bakar Abd Rahman and Adrian Boland-Thomas and Anthony John Vickers (2020) Electrical and Photo-Electrical Characteristics of a GaInNAs basedp-i-n Diode with 10- undoped Quantum Wells. ASM Science Journal, 13. pp. 1-6. https://doi.org/10.32802/asmscj.2020.sm26(2.11) |
| spellingShingle | Q Science (General) Khairul Anuar Mohamad Mohamad Syahmi Nordin Mohamad Izzuddin Abd Samad Afishah Alias Abu Bakar Abd Rahman Adrian Boland-Thomas Anthony John Vickers Electrical and Photo-Electrical Characteristics of a GaInNAs basedp-i-n Diode with 10- undoped Quantum Wells |
| title | Electrical and Photo-Electrical Characteristics of a GaInNAs basedp-i-n Diode with 10- undoped Quantum Wells |
| title_full | Electrical and Photo-Electrical Characteristics of a GaInNAs basedp-i-n Diode with 10- undoped Quantum Wells |
| title_fullStr | Electrical and Photo-Electrical Characteristics of a GaInNAs basedp-i-n Diode with 10- undoped Quantum Wells |
| title_full_unstemmed | Electrical and Photo-Electrical Characteristics of a GaInNAs basedp-i-n Diode with 10- undoped Quantum Wells |
| title_short | Electrical and Photo-Electrical Characteristics of a GaInNAs basedp-i-n Diode with 10- undoped Quantum Wells |
| title_sort | electrical and photo electrical characteristics of a gainnas basedp i n diode with 10 undoped quantum wells |
| topic | Q Science (General) |
| url | https://eprints.ums.edu.my/id/eprint/26392/1/Electrical%20and%20Photo-Electrical%20Characteristics%20of%20a%20GaInNAs%20basedp-i-n%20Diode%20with%2010-%20undoped%20Quantum%20Wells.pdf https://eprints.ums.edu.my/id/eprint/26392/2/Electrical%20and%20Photo-Electrical%20Characteristics%20of%20a%20GaInNAs%20basedp-i-n%20Diode%20with%2010-%20undoped%20Quantum%20Wells1.pdf |
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