High-k gate dielectric nano-FET leakage current analysis

High-k gate dielectric nano-FET leakage current analysis

This paper reveals the use of high-k dielectric material to mitigate the subthreshold leakage current. The feature size of conventional MOSFET using SiO2 has approached their physical limits where the oxide thickness should not reach below 2nm due to high leakage current and the tunnelling increase...

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Bibliographic Details
Main Authors: Bunseng, Chan, Charlie Soh, Kang, Eng Siew, Hui, Seng Kheong, Lim, Wei Jer, Ismail Saad, Nurmin Bolong
Format: Proceedings
Language:English
English
Published: Institute of Electrical and Electronics Engineers 2021
Subjects:
TA1-2040 Engineering (General). Civil engineering (General)
TK1-9971 Electrical engineering. Electronics. Nuclear engineering
Online Access:https://eprints.ums.edu.my/id/eprint/32713/2/High-k%20gate%20dielectric%20nano-FET%20leakage%20current%20analysis.ABSTRACT.pdf
https://eprints.ums.edu.my/id/eprint/32713/1/High-k%20Gate%20Dielectric%20Nano-FET%20Leakage%20Current%20Analysis.pdf

Internet

https://eprints.ums.edu.my/id/eprint/32713/2/High-k%20gate%20dielectric%20nano-FET%20leakage%20current%20analysis.ABSTRACT.pdf
https://eprints.ums.edu.my/id/eprint/32713/1/High-k%20Gate%20Dielectric%20Nano-FET%20Leakage%20Current%20Analysis.pdf

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