Impedance spectroscopy analysis of Al/100-plane AlN/p-Si MIS prepared by HiPIMS method for tailoring dielectric properties

The effects of variation of sputtering pressure of AlN HiPIMS deposition on Si substrate to the structure and electrical properties were investigated through XRD, AFM and impedance spectroscopy method. The strong preferred 100-plane AlN was observed for all samples from XRD pattern. The AlN thin fil...

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Bibliographic Details
Main Authors: Zulkifli Azman, Nafarizal Nayan, Megat Muhammad Ikhsan Megat Hasnan, Ahmad Shuhaimi Abu Bakar, Mohamad Hafiz Mamat, Mohd Zamri Mohd Yusop
Format: Article
Language:English
Published: Inderscience Online 2022
Subjects:
Online Access:https://eprints.ums.edu.my/id/eprint/34351/1/Abstract.pdf