Computational analysis of ballistic saturation velocity in low-dimensional nano-MOSFET
The computational analysis of ballistic saturation velocity for low-dimensional nano-devices was presented. The ballistic transport is predicted in the presence of high electric field for non-degenerate and degenerate regime. The saturation velocity is found to be ballistic regardless of the device...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
United Kingdom Simulation Society
2011
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| Subjects: | |
| Online Access: | https://eprints.ums.edu.my/id/eprint/5077/1/Computational_analysis_of_ballistic_saturation_velocity_in_low.pdf |