Computational analysis of ballistic saturation velocity in low-dimensional nano-MOSFET
The computational analysis of ballistic saturation velocity for low-dimensional nano-devices was presented. The ballistic transport is predicted in the presence of high electric field for non-degenerate and degenerate regime. The saturation velocity is found to be ballistic regardless of the device...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
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United Kingdom Simulation Society
2011
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| Online Access: | https://eprints.ums.edu.my/id/eprint/5077/1/Computational_analysis_of_ballistic_saturation_velocity_in_low.pdf |
| _version_ | 1825713132573556736 |
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| author | Ismail Saad A. M. Khairul Nurmin Bolong A. R. Abu Bakar Vijay K. Arora |
| author_facet | Ismail Saad A. M. Khairul Nurmin Bolong A. R. Abu Bakar Vijay K. Arora |
| author_sort | Ismail Saad |
| collection | UMS |
| description | The computational analysis of ballistic saturation velocity for low-dimensional nano-devices was presented. The ballistic transport is predicted in the presence of high electric field for non-degenerate and degenerate regime. The saturation velocity is found to be ballistic regardless of the device dimensions. The intrinsic velocity limits this saturation velocity. It's does not sensitively depend on the ballistic or scattering-limited nature of the mobility. In the degenerate realm, the saturation velocity is shown to be the Fermi velocity that is independent of temperature but strongly dependent on carrier concentration. In the nondegenerate realm, the intrinsic velocity is the thermal velocity that depends only on the ambient temperature. |
| first_indexed | 2025-03-05T00:48:43Z |
| format | Article |
| id | ums.eprints-5077 |
| institution | Universiti Malaysia Sabah |
| language | English |
| last_indexed | 2025-03-05T00:48:43Z |
| publishDate | 2011 |
| publisher | United Kingdom Simulation Society |
| record_format | dspace |
| spelling | ums.eprints-50772017-10-20T05:20:02Z https://eprints.ums.edu.my/id/eprint/5077/ Computational analysis of ballistic saturation velocity in low-dimensional nano-MOSFET Ismail Saad A. M. Khairul Nurmin Bolong A. R. Abu Bakar Vijay K. Arora TK Electrical engineering. Electronics Nuclear engineering The computational analysis of ballistic saturation velocity for low-dimensional nano-devices was presented. The ballistic transport is predicted in the presence of high electric field for non-degenerate and degenerate regime. The saturation velocity is found to be ballistic regardless of the device dimensions. The intrinsic velocity limits this saturation velocity. It's does not sensitively depend on the ballistic or scattering-limited nature of the mobility. In the degenerate realm, the saturation velocity is shown to be the Fermi velocity that is independent of temperature but strongly dependent on carrier concentration. In the nondegenerate realm, the intrinsic velocity is the thermal velocity that depends only on the ambient temperature. United Kingdom Simulation Society 2011-06 Article PeerReviewed text en https://eprints.ums.edu.my/id/eprint/5077/1/Computational_analysis_of_ballistic_saturation_velocity_in_low.pdf Ismail Saad and A. M. Khairul and Nurmin Bolong and A. R. Abu Bakar and Vijay K. Arora (2011) Computational analysis of ballistic saturation velocity in low-dimensional nano-MOSFET. International Journal of Simulation: Systems, Science and Technology, 12 (3). pp. 1-6. ISSN 1473-8031 http://ijssst.info/Vol-12/No-3/paper1.pdf |
| spellingShingle | TK Electrical engineering. Electronics Nuclear engineering Ismail Saad A. M. Khairul Nurmin Bolong A. R. Abu Bakar Vijay K. Arora Computational analysis of ballistic saturation velocity in low-dimensional nano-MOSFET |
| title | Computational analysis of ballistic saturation velocity in low-dimensional nano-MOSFET |
| title_full | Computational analysis of ballistic saturation velocity in low-dimensional nano-MOSFET |
| title_fullStr | Computational analysis of ballistic saturation velocity in low-dimensional nano-MOSFET |
| title_full_unstemmed | Computational analysis of ballistic saturation velocity in low-dimensional nano-MOSFET |
| title_short | Computational analysis of ballistic saturation velocity in low-dimensional nano-MOSFET |
| title_sort | computational analysis of ballistic saturation velocity in low dimensional nano mosfet |
| topic | TK Electrical engineering. Electronics Nuclear engineering |
| url | https://eprints.ums.edu.my/id/eprint/5077/1/Computational_analysis_of_ballistic_saturation_velocity_in_low.pdf |
| work_keys_str_mv | AT ismailsaad computationalanalysisofballisticsaturationvelocityinlowdimensionalnanomosfet AT amkhairul computationalanalysisofballisticsaturationvelocityinlowdimensionalnanomosfet AT nurminbolong computationalanalysisofballisticsaturationvelocityinlowdimensionalnanomosfet AT arabubakar computationalanalysisofballisticsaturationvelocityinlowdimensionalnanomosfet AT vijaykarora computationalanalysisofballisticsaturationvelocityinlowdimensionalnanomosfet |