Modelling and Simulation of Si/SiGe Heterostructure Devices
Complementary metal-oxide-semiconductor (CMOS) is currently the most dominant technology used in making integrated systems. It consists of both n-channel MOS transistor (NMOS) and p-channel MOS transistor (PMOS) fabricated on the same substrate. Conventionally, the substrate is made of silicon. A...
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| Format: | Thesis |
| Language: | English English |
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2002
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| Online Access: | http://psasir.upm.edu.my/id/eprint/10622/1/FK_2002_16.pdf |