SPICE simulation assisted-dynamic Rds(on) characterization in 200V commercial Schottky p- GaN HEMTs under unstable phases
This paper presents a comprehensive analysis of dynamic and static RDS(ON) in Schottky p-GaN High Electron Mobility Transistors (HEMTs), highlighting the impact of offstate and hot electron trapping on device performance. The authors observed significant hysteresis in the transfer characteristics of...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Institute of Physics
2024
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| Online Access: | http://psasir.upm.edu.my/id/eprint/115380/1/115380.pdf |