Development of dielectric material, CaCu3Ti4O12
CaCu3Ti4O12 (CCTO) was prepared by a conventional solid state reaction method. CCTO sample was pre-sintered at 900°C for 10 hours and sintered at 1075°C for 12 hours. The dielectric properties of the sample were measured using HP 4192A LF Impedance Analyzer. The complex permittivity was measured wit...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Malaysian Solid State Science and Technology Society
2008
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| Online Access: | http://psasir.upm.edu.my/id/eprint/14014/1/Development%20of%20dielectric%20material%2C%20CaCu3Ti4O12.pdf |