Effect of an in-situ thermal annealing on the structural properties of self-assembled GaSb/GaAs quantum dots

Effect of an in-situ thermal annealing on the structural properties of self-assembled GaSb/GaAs quantum dots

In this work, the effect of the application of a thermal annealing on the structural properties of GaSb/GaAs quantum dots (QDs)1 is analyzed by aberration corrected high-angle annular dark-field scanning transmission electron microscopy (HAADF-STEM)2 and electron energy loss spectroscopy (EELS)3 Our...

Полное описание

Библиографические подробности
Главные авторы: Fernández-Delgado, Natalia, Collado, Miriam Herrera, Chisholm, Matthew F., Ahmad Kamarudin, Mazliana, Zhuang, Qian Dong, Hayne, Manus, Molina, Sergio I.
Формат: Статья
Язык:English
Опубликовано: Elsevier 2017
Online-ссылка:http://psasir.upm.edu.my/id/eprint/15114/1/Effect%20of%20an%20in-situ%20thermal%20annealing%20on%20the%20structural%20properties%20of%20self-assembled%20GaSbGaAs%20quantum%20dots.pdf

Internet

http://psasir.upm.edu.my/id/eprint/15114/1/Effect%20of%20an%20in-situ%20thermal%20annealing%20on%20the%20structural%20properties%20of%20self-assembled%20GaSbGaAs%20quantum%20dots.pdf

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