Characterization of semiconductor nanowires using optical tweezers

We report on the optical trapping characteristics of InP nanowires with dimensions of 30 (±6) nm in diameter and 2 - 15 μm in length. We describe a method for calibrating the absolute position of individual nanowires relative to the trapping center using synchronous high-speed position sensing and a...

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Main Authors: Reece, Peter J., Toe, Wen Jun, Wang, Fan, Paiman, Suriati, Gao, Qiang, Tan, Hark Hoe, Jagadish, Chennupati
Format: Article
Language:English
Published: American Chemical Society 2011
Online Access:http://psasir.upm.edu.my/id/eprint/24834/1/Characterization%20of%20semiconductor%20nanowires%20using%20optical%20tweezers.pdf
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author Reece, Peter J.
Toe, Wen Jun
Wang, Fan
Paiman, Suriati
Gao, Qiang
Tan, Hark Hoe
Jagadish, Chennupati
author_facet Reece, Peter J.
Toe, Wen Jun
Wang, Fan
Paiman, Suriati
Gao, Qiang
Tan, Hark Hoe
Jagadish, Chennupati
author_sort Reece, Peter J.
collection UPM
description We report on the optical trapping characteristics of InP nanowires with dimensions of 30 (±6) nm in diameter and 2 - 15 μm in length. We describe a method for calibrating the absolute position of individual nanowires relative to the trapping center using synchronous high-speed position sensing and acousto-optic beam switching. Through Brownian dynamics we investigate effects of the laser power and polarization on trap stability, as well as length dependence and the effect of simultaneous trapping multiple nanowires.
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spelling upm.eprints-248342016-08-24T02:09:48Z http://psasir.upm.edu.my/id/eprint/24834/ Characterization of semiconductor nanowires using optical tweezers Reece, Peter J. Toe, Wen Jun Wang, Fan Paiman, Suriati Gao, Qiang Tan, Hark Hoe Jagadish, Chennupati We report on the optical trapping characteristics of InP nanowires with dimensions of 30 (±6) nm in diameter and 2 - 15 μm in length. We describe a method for calibrating the absolute position of individual nanowires relative to the trapping center using synchronous high-speed position sensing and acousto-optic beam switching. Through Brownian dynamics we investigate effects of the laser power and polarization on trap stability, as well as length dependence and the effect of simultaneous trapping multiple nanowires. American Chemical Society 2011-06-08 Article PeerReviewed application/pdf en http://psasir.upm.edu.my/id/eprint/24834/1/Characterization%20of%20semiconductor%20nanowires%20using%20optical%20tweezers.pdf Reece, Peter J. and Toe, Wen Jun and Wang, Fan and Paiman, Suriati and Gao, Qiang and Tan, Hark Hoe and Jagadish, Chennupati (2011) Characterization of semiconductor nanowires using optical tweezers. Nano Letters, 11 (6). pp. 2375-2381. ISSN 1530-6984; ESSN: 1530-6992 http://pubs.acs.org/doi/abs/10.1021/nl200720m 10.1021/nl200720m
spellingShingle Reece, Peter J.
Toe, Wen Jun
Wang, Fan
Paiman, Suriati
Gao, Qiang
Tan, Hark Hoe
Jagadish, Chennupati
Characterization of semiconductor nanowires using optical tweezers
title Characterization of semiconductor nanowires using optical tweezers
title_full Characterization of semiconductor nanowires using optical tweezers
title_fullStr Characterization of semiconductor nanowires using optical tweezers
title_full_unstemmed Characterization of semiconductor nanowires using optical tweezers
title_short Characterization of semiconductor nanowires using optical tweezers
title_sort characterization of semiconductor nanowires using optical tweezers
url http://psasir.upm.edu.my/id/eprint/24834/1/Characterization%20of%20semiconductor%20nanowires%20using%20optical%20tweezers.pdf
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