Reactive ion etching of 4H-SiC using SF6/O2 for MEMS application
Deep Reactive Ion Etching (DRIE) of 4H-SiC performed using SF6/O2 plasma. The etching rates investigated as a function of the ratio of the O2 flow rate to total gas flow rate under different etching conditions such as the effect of power density, temperature, and the combination of chemistries on et...
| Main Authors: | , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
2013
|
| Online Access: | http://psasir.upm.edu.my/id/eprint/28742/1/Reactive%20ion%20etching%20of%204H.pdf |