Hole migration and optically induced charge depletion in GaSb/GaAs wetting layers and quantum rings

We present the results of photoluminescence (PL) measurements on a type-II GaSb/GaAs quantum dot/ring sample as a function of temperature (2 to 400 K) and over six orders of magnitude of incident laser excitation power. Optically induced charge depletion (OICD) was seen in both the wetting layer (...

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Bibliografiska uppgifter
Huvudupphovsmän: Hodgson, Peter D., Young, Robert J., Ahmad Kamarudin, Mazliana, Zhuang, Qian Dong, Hayne, Manus
Materialtyp: Artikel
Språk:English
English
Publicerad: American Physical Society 2013
Länkar:http://psasir.upm.edu.my/id/eprint/30304/1/Hole%20migration%20and%20optically%20induced%20charge%20depletion%20in%20GaSb.pdf