Hole migration and optically induced charge depletion in GaSb/GaAs wetting layers and quantum rings
We present the results of photoluminescence (PL) measurements on a type-II GaSb/GaAs quantum dot/ring sample as a function of temperature (2 to 400 K) and over six orders of magnitude of incident laser excitation power. Optically induced charge depletion (OICD) was seen in both the wetting layer (...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English English |
| Published: |
American Physical Society
2013
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| Online Access: | http://psasir.upm.edu.my/id/eprint/30304/1/Hole%20migration%20and%20optically%20induced%20charge%20depletion%20in%20GaSb.pdf |