Fabrication of p-type Double gate and Single gate Junctionless silicon nanowire transistor by Atomic force microscopy nanolithography
In this work, we have investigated the fabrication of Double gate and Single gate Junctionless silicon nanowire transistor using silicon nanowire patterned on lightly doped (105 cm-3) p-type Silicon on insulator wafer fabricated by Atomic force microscopy nanolithography technique. Local anodic oxid...
| Main Authors: | , , , , , , , , , |
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| Format: | Book Section |
| Published: |
Trans Tech Publications
2013
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