MOCVD-grown indium phosphide nanowires for optoelectronics
We demonstrate how growth parameters may be adopted to produce morphologically controlled high-quality indium phosphide (InP) nanowires suitable for optoelectronic device applications. Growth temperature, V/III ratio, and catalyst particle size have a significant effect on the morphology, crystallog...
| Main Authors: | , , , , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Trans Tech Publications
2014
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| Online Access: | http://psasir.upm.edu.my/id/eprint/34538/1/MOCVD-grown%20indium%20phosphide%20nanowires%20for%20optoelectronics.pdf |