Photoelectric properties of metal-semiconductor-metal photodetector based on porous silicon
Metal-semiconductor-metal (MSM) photodetector was fabricated on a Porous silicon (PS) layer that was prepared using photo electrochemical etching (PEC). The surface morphology of the PS was carried out by field emission scanning electron microscopy. The I-V characteristics under dark and illuminated...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
The Malaysian Solid State Science and Technology Society
2016
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| Online Access: | http://psasir.upm.edu.my/id/eprint/53564/1/Photoelectric%20properties%20of%20metal-semiconductor-metal%20photodetector%20based%20on%20porous%20silicon.pdf |