Photoelectric properties of metal-semiconductor-metal photodetector based on porous silicon
Metal-semiconductor-metal (MSM) photodetector was fabricated on a Porous silicon (PS) layer that was prepared using photo electrochemical etching (PEC). The surface morphology of the PS was carried out by field emission scanning electron microscopy. The I-V characteristics under dark and illuminated...
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| Format: | Article |
| Language: | English |
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The Malaysian Solid State Science and Technology Society
2016
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| Online Access: | http://psasir.upm.edu.my/id/eprint/53564/1/Photoelectric%20properties%20of%20metal-semiconductor-metal%20photodetector%20based%20on%20porous%20silicon.pdf |
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| author | Al-Jumaili, Batool Eneaze Bandar Talib, Zainal Abidin L. Y., Josephine Paiman, Suriati M. Ahmed, Naser |
| author_facet | Al-Jumaili, Batool Eneaze Bandar Talib, Zainal Abidin L. Y., Josephine Paiman, Suriati M. Ahmed, Naser |
| author_sort | Al-Jumaili, Batool Eneaze Bandar |
| collection | UPM |
| description | Metal-semiconductor-metal (MSM) photodetector was fabricated on a Porous silicon (PS) layer that was prepared using photo electrochemical etching (PEC). The surface morphology of the PS was carried out by field emission scanning electron microscopy. The I-V characteristics under dark and illuminated conditions and the responsivity of Pt-PS-Si heterostructures were investigated. The device exhibited that photogeneration in heterojunction happens in each of the regions of the porous Si film and Si substrate. The MSM photodetector exhibited sensitivity of 3.22×102 as well as inner gain of 4.22 when exposed to tungsten lamp at 5 V. The photodetector also shows good repeatability when illuminated with 460 nm (7 W/cm2) chopped light and the saturation current increased as the voltage increase. |
| first_indexed | 2024-03-06T09:18:13Z |
| format | Article |
| id | upm.eprints-53564 |
| institution | Universiti Putra Malaysia |
| language | English |
| last_indexed | 2024-03-06T09:18:13Z |
| publishDate | 2016 |
| publisher | The Malaysian Solid State Science and Technology Society |
| record_format | dspace |
| spelling | upm.eprints-535642022-03-18T05:58:34Z http://psasir.upm.edu.my/id/eprint/53564/ Photoelectric properties of metal-semiconductor-metal photodetector based on porous silicon Al-Jumaili, Batool Eneaze Bandar Talib, Zainal Abidin L. Y., Josephine Paiman, Suriati M. Ahmed, Naser Metal-semiconductor-metal (MSM) photodetector was fabricated on a Porous silicon (PS) layer that was prepared using photo electrochemical etching (PEC). The surface morphology of the PS was carried out by field emission scanning electron microscopy. The I-V characteristics under dark and illuminated conditions and the responsivity of Pt-PS-Si heterostructures were investigated. The device exhibited that photogeneration in heterojunction happens in each of the regions of the porous Si film and Si substrate. The MSM photodetector exhibited sensitivity of 3.22×102 as well as inner gain of 4.22 when exposed to tungsten lamp at 5 V. The photodetector also shows good repeatability when illuminated with 460 nm (7 W/cm2) chopped light and the saturation current increased as the voltage increase. The Malaysian Solid State Science and Technology Society 2016 Article PeerReviewed text en http://psasir.upm.edu.my/id/eprint/53564/1/Photoelectric%20properties%20of%20metal-semiconductor-metal%20photodetector%20based%20on%20porous%20silicon.pdf Al-Jumaili, Batool Eneaze Bandar and Talib, Zainal Abidin and L. Y., Josephine and Paiman, Suriati and M. Ahmed, Naser (2016) Photoelectric properties of metal-semiconductor-metal photodetector based on porous silicon. Journal of Solid State Science and Technology Letters, 17 (1). pp. 79-82. ISSN 0128-8393 http://ufds.uofallujah.edu.iq/dspace/bitstream/123456789/1249/1/Photoelectric%20properties%20of%20Metal-Semiconductor-Metal%20Photodetector%20based%20on%20Porous%20Silicon.pdf |
| spellingShingle | Al-Jumaili, Batool Eneaze Bandar Talib, Zainal Abidin L. Y., Josephine Paiman, Suriati M. Ahmed, Naser Photoelectric properties of metal-semiconductor-metal photodetector based on porous silicon |
| title | Photoelectric properties of metal-semiconductor-metal photodetector based on porous silicon |
| title_full | Photoelectric properties of metal-semiconductor-metal photodetector based on porous silicon |
| title_fullStr | Photoelectric properties of metal-semiconductor-metal photodetector based on porous silicon |
| title_full_unstemmed | Photoelectric properties of metal-semiconductor-metal photodetector based on porous silicon |
| title_short | Photoelectric properties of metal-semiconductor-metal photodetector based on porous silicon |
| title_sort | photoelectric properties of metal semiconductor metal photodetector based on porous silicon |
| url | http://psasir.upm.edu.my/id/eprint/53564/1/Photoelectric%20properties%20of%20metal-semiconductor-metal%20photodetector%20based%20on%20porous%20silicon.pdf |
| work_keys_str_mv | AT aljumailibatooleneazebandar photoelectricpropertiesofmetalsemiconductormetalphotodetectorbasedonporoussilicon AT talibzainalabidin photoelectricpropertiesofmetalsemiconductormetalphotodetectorbasedonporoussilicon AT lyjosephine photoelectricpropertiesofmetalsemiconductormetalphotodetectorbasedonporoussilicon AT paimansuriati photoelectricpropertiesofmetalsemiconductormetalphotodetectorbasedonporoussilicon AT mahmednaser photoelectricpropertiesofmetalsemiconductormetalphotodetectorbasedonporoussilicon |