Development Of Si02 Thin Film On singlecrystal Sic By anodic oxidation technique.
Anodic silicon dioxide (Si02) thin film is growth on p- and n-type silicon (Si) and p-type 4H-silicon carbide (SiC) substrate with the thickness ranging from 50-130 nm. Filem nipis Si02 tersadur anod telah ditumbuhkankan di atas substrat silikon (Si) jenis p dan n serta silikon karbida jenis-p de...
Main Authors: | , , |
---|---|
Format: | Monograph |
Published: |
Universiti Sains Malaysia
2008
|
Subjects: |
_version_ | 1825828654390706176 |
---|---|
author | Cheong, Kuan Yew Purwadaria, Sunara Lockman, Zainovia |
author_facet | Cheong, Kuan Yew Purwadaria, Sunara Lockman, Zainovia |
author_sort | Cheong, Kuan Yew |
collection | USM |
description | Anodic silicon dioxide (Si02) thin film is growth on p- and n-type silicon (Si) and p-type 4H-silicon carbide (SiC) substrate with the thickness ranging from 50-130 nm.
Filem nipis Si02 tersadur anod telah ditumbuhkankan di atas substrat silikon (Si) jenis p dan n serta silikon karbida jenis-p dengan ketebalan dalam julat 50-130.
|
first_indexed | 2024-03-06T13:56:48Z |
format | Monograph |
id | usm.eprints-10152 |
institution | Universiti Sains Malaysia |
last_indexed | 2024-03-06T13:56:48Z |
publishDate | 2008 |
publisher | Universiti Sains Malaysia |
record_format | dspace |
spelling | usm.eprints-101522017-09-12T04:43:44Z http://eprints.usm.my/10152/ Development Of Si02 Thin Film On singlecrystal Sic By anodic oxidation technique. Cheong, Kuan Yew Purwadaria, Sunara Lockman, Zainovia TN1-997 Mining engineering. Metallurgy Anodic silicon dioxide (Si02) thin film is growth on p- and n-type silicon (Si) and p-type 4H-silicon carbide (SiC) substrate with the thickness ranging from 50-130 nm. Filem nipis Si02 tersadur anod telah ditumbuhkankan di atas substrat silikon (Si) jenis p dan n serta silikon karbida jenis-p dengan ketebalan dalam julat 50-130. Universiti Sains Malaysia 2008 Monograph NonPeerReviewed Cheong, Kuan Yew and Purwadaria, Sunara and Lockman, Zainovia (2008) Development Of Si02 Thin Film On singlecrystal Sic By anodic oxidation technique. Project Report. Universiti Sains Malaysia. |
spellingShingle | TN1-997 Mining engineering. Metallurgy Cheong, Kuan Yew Purwadaria, Sunara Lockman, Zainovia Development Of Si02 Thin Film On singlecrystal Sic By anodic oxidation technique. |
title | Development Of Si02 Thin Film On singlecrystal Sic By anodic oxidation technique.
|
title_full | Development Of Si02 Thin Film On singlecrystal Sic By anodic oxidation technique.
|
title_fullStr | Development Of Si02 Thin Film On singlecrystal Sic By anodic oxidation technique.
|
title_full_unstemmed | Development Of Si02 Thin Film On singlecrystal Sic By anodic oxidation technique.
|
title_short | Development Of Si02 Thin Film On singlecrystal Sic By anodic oxidation technique.
|
title_sort | development of si02 thin film on singlecrystal sic by anodic oxidation technique |
topic | TN1-997 Mining engineering. Metallurgy |
work_keys_str_mv | AT cheongkuanyew developmentofsi02thinfilmonsinglecrystalsicbyanodicoxidationtechnique AT purwadariasunara developmentofsi02thinfilmonsinglecrystalsicbyanodicoxidationtechnique AT lockmanzainovia developmentofsi02thinfilmonsinglecrystalsicbyanodicoxidationtechnique |